SPD100N03S2L-04
OptiMOS® Power-Transistor
Feature
• N-Channel
Product SummaryVDSRDS(on)ID304.2100
P-TO252-5-1
VmΩA
• Enhancement mode• Logic Level
• Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature• Avalanche rated• dv/dt rated
Titel:C:\\ARJ\\VPT0Erstellt von:1)
Drainpin 3,6TypePackageSPD100N03S2L-04P-TO252-5-1Ordering CodeQ67042-S4128
MarkingPN03L04
Gatepin 1n.c.: pin 2Sourcepin 4,5Maximum Ratings, at Tj = 25 °C, unless otherwise specifiedParameter
Continuous drain current2)
TC=100°C
SymbolID
Value 100100
UnitA
Pulsed drain current
TC=25°C
ID pulsEASEARdv/dtVGSPtotTj , Tstg400325156±20150-55... +17555/175/56
kV/µsVW°CmJ
Avalanche energy, single pulse
ID=80A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax3)Reverse diode dv/dt
IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltagePower dissipation
TC=25°C
Operating and storage temperatureIEC climatic category; DIN IEC 68-1
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SPD100N03S2L-04
Thermal CharacteristicsParameterCharacteristics
Thermal resistance, junction - caseSMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 4)
Symbol
min.
RthJC RthJA
- --
Valuestyp.0.7 --max.1 7550
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specifiedParameter
Static CharacteristicsDrain-source breakdown voltage
VGS=0V, ID=1mA
Symbol
min.
V(BR)DSSVGS(th)IDSS
301.2 --IGSSRDS(on)RDS(on)
---
Valuestyp.-1.6 0.0110153.4
max.-2 11001006.34.2
Unit
V
Gate threshold voltage, VGS = VDS
ID = 100 µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C
µA
Gate-source leakage current
VGS=20V, VDS=0V
nAmΩ
Drain-source on-state resistance
VGS=4.5V, ID=50A
Drain-source on-state resistance
VGS=10V, ID=50A
1pin 1 and 2 have to be connected together on the PCB as well as pin 4 and 5.
2Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 307A at 25°C, for detailedinformation see app.-note ANPS071E available at www.infineon.com/optimos3Defined by design. Not subject to production test.
4Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
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SPD100N03S2L-04
Electrical CharacteristicsParameter
Dynamic CharacteristicsTransconductanceInput capacitanceOutput capacitance
Reverse transfer capacitanceTurn-on delay timeRise time
Turn-off delay timeFall time
Gate Charge CharacteristicsGate to source chargeGate to drain chargeGate charge totalGate plateau voltage
QgsQgdQg
VDD=24V, ID=100A, VGS=0 to 10VVDD=24V, ID=100A
SymbolConditions
min.
Valuestyp.118250098023012174524
max.-
Unit
gfsCissCossCrsstd(on)trtd(off)tfVDS≥2*ID*RDS(on)max, ID=100A
VGS=0V, VDS=25V, f=1MHz
59-------
S
3320pF130035018266736
ns
VDD=15V, VGS=10V, ID=50A, RG=2.7Ω
----
7.923.367.53.6
10.53589.7-
nC
V(plateau)VDD=24V, ID=100A
V
Reverse DiodeInverse diode continuous forward current
Inv. diode direct current, pulsedInverse diode forward voltageReverse recovery timeReverse recovery charge
ISMVSDtrrQrrVGS=0V, IF=80AVR=15V, IF=lS, diF/dt=200A/µs
IS
TC=25°C
-----
--0.94656
1004001.35869
A
VnsnC
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SPD100N03S2L-04
1 Power dissipationPtot = f (TC)
parameter: VGS≥ 4 V
160 SPD100N03S2L-042 Drain currentID = f (TC)
parameter: VGS≥ 10 V
SPD100N03S2L-04110 WA
90 120 80 Ptot100 ID100120140160°C19070 60 80 50 60 40 30 20 20 10 204060800 020406080100120140160°C19040 0 0TCTC3 Safe operating areaID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 3 SPD100N03S2L-04t p = 8.5µs4 Max. transient thermal impedanceZthJC = f (tp)parameter : D = tp/T
10 1 SPD100N03S2L-04K/W
V DS / I DA 10 µs10 0 DS(on) = ID R 10 2 ZthJC 100 µs10 -1 D = 0.50 1 ms10 -2 0.200.100.050.02single pulse0.0110 1 10 -3 10 0 -1 10 10 0 10 1 V10 2
10 -4 -7 -6 10 10 10 -5 10 -4 10 -3 10 -2 s10 0
VDSPage 4
tp2003-05-09
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SPD100N03S2L-04
5 Typ. output characteristicID = f (VDS); Tj=25°Cparameter: tp = 80 µs
240 SPD100N03S2L-046 Typ. drain-source on resistanceRDS(on) = f (ID)parameter: VGS
SPD100N03S2L-04Ptot = 150WihgfV [V] GSa2.5b3.03.54.04.55.05.56.010.014 A200 180 eΩ
12 11 cdecdefgRDS(on)10 9 8 7 6 5 4 hifgID160 140 120 100 80 60 40 20 0 0abcdhi3 2 VGS [V] = 1 c3.5d4.0ef4.55.0g5.5hi6.010.00.511.522.533.54V50 020406080100120140160A200VDSID7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)maxparameter: tp = 20 µs
180 8 Typ. forward transconductancegfs = f(ID); Tj=25°Cparameter: gfs
130 AS
110 140 120 100 80 60 40 20 0 0100 90 IDgfs V4.5 VGS80 70 60 50 40 30 20 10 0.511.522.533.50 020406080100120AID160Page 5
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SPD100N03S2L-04
9 Drain-source on-state resistanceRDS(on) = f (Tj)
parameter : ID = 50 A, VGS = 10 V
SPD100N03S2L-0410 Typ. gate threshold voltageVGS(th) = f (Tj)parameter: VGS = VDS
2.35 11 Ω9 V
1.95 RDS(on)8 7 6 VGS(th)1.75 1.55 1.35 ID=6.4mA5 4 3 2 1 0 -60-202098%1.15 typ0.95 0.75 0.55 140°C0.35 -60ID=110µA60100200-202060100°CTj180Tj11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4 12 Forward character. of reverse diodeIF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 SPD100N03S2L-04A
pF
Ciss10 2 CCoss10 3 IF10 1 CrssTj = 25 °C typTj = 175 °C typTj = 25 °C (98%)Tj = 175 °C (98%)10 2 05101520V3010 0 00.40.81.21.622.4V3VDSPage 6
VSD2003-05-09
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SPD100N03S2L-04
13 Typ. avalanche energy EAS = f (Tj)
par.: ID = 80 A, VDD = 25 V, RGS = 25 Ω
14 Typ. gate chargeVGS = f (QGate)
parameter: ID = 100 A pulsed
350 mJ
S250 ASEG V200 150 100 50 0 25456585105125145 °C185 Tj15 Drain-source breakdown voltageV(BR)DSS = f (Tj)parameter: ID=10 mA
36 SPD100N03S2L-04VSS34 D)RB(33 V32 31 30 29 28 27 -60-202060100140°C200TjPage 7
16 SPD100N03S2L-04V
12 10 0,2 VDS max0,8 VDS max8 6 4 2 0 020406080nC110QGate2003-05-09
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SPD100N03S2L-04
Published by
Infineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München
© Infineon Technologies AG 1999All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
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Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.
Further information
Please notice that the part number is BSPD100N03S2L-04, for simplicity the device is referred to by the termSPD100N03S2L-04 throughout this documentation.
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