Method of forming a self-aligned contact structure

专利名称：Method of forming a self-aligned contact

structure using a sacrificial mask layer

发明人：Cheol-Ju Yun,Tae-Young Chung申请号：US10846810申请日：20040513公开号：US07205232B2公开日：20070417

专利附图：

摘要：Disclosed is a method of forming a self-aligned contact structure using asacrificial mask layer. The method includes forming a plurality of parallel interconnectionpatterns on a semiconductor substrate. Each of the interconnection patterns has an

interconnection and a mask pattern, which are sequentially stacked. Interlayer insulatinglayer patterns are formed to fill gap regions between the interconnection patterns. Themask patterns are partially etched to form recessed mask patterns that define groovesbetween the interlayer insulating layer patterns. Then, sacrificial mask patterns filling thegrooves are formed. A predetermined region of the interlayer insulating layer patterns isetched using the sacrificial mask patterns as etching masks to form a self-aligned contacthole that exposes a predetermined region of the semiconductor substrate. A spacer isformed of a sidewall of the self-aligned contact hole, and a plug surrounded by thespacer is formed in the self-aligned contact hole.

申请人：Cheol-Ju Yun,Tae-Young Chung

地址：Gyeonggi-do KR,Gyeonggi-do KR

国籍：KR,KR

代理机构：Marger Johnson & McCollom, P.C.

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