Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement▼ Small Package Outline▼ Surface Mount Device
▼ RoHS Compliant & Halogen-Free
SOT-23
G
S
P-CHANNEL ENHANCEMENT MODEPOWER MOSFET
D
BVDSSRDS(ON)ID
D-20V97mΩ- 3.3A
Description
AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombination of fast switching,low on-resistance and cost-effectiveness.TheSOT-23packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.
GSAbsolute Maximum Ratings
SymbolVDSVGS
ID@TA=25℃ID@TA=70℃IDM
PD@TA=25℃TSTGTJ
Parameter
Drain-Source VoltageGate-Source Voltage
Continuous Drain Current3, VGS @ 4.5VContinuous Drain Current3, VGS @ 4.5VPulsed Drain Current1Total Power DissipationStorage Temperature Range
Operating Junction Temperature Range
Rating- 20+8-3.3-2.7-151.38-55 to 150-55 to 150
UnitsVVAAAW ℃℃
Thermal Data
SymbolRthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value90
Unit℃/W
1
201303084
Data and specifications subject to change without notice
AP2301AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
SymbolBVDSSRDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrssRg
Parameter
Drain-Source Breakdown VoltageStatic Drain-Source On-Resistance2
Test Conditions
VGS=0V, ID=-250uAVGS=-4.5V, ID=-3AVGS=-2.5V, ID=-2.6A
Gate Threshold VoltageForward TransconductanceDrain-Source Leakage CurrentGate-Source LeakageTotal Gate ChargeGate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay TimeRise Time
Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance
Reverse Transfer CapacitanceGate Resistance
VDS=VGS, ID=-250uAVDS=-5V, ID=-3AVDS=-16V, VGS=0VVGS= +8V, VDS=0VID=-3AVDS=-10VVGS=-4.5VVDS=-10VID=-1ARG=3.3ΩVGS=-5VVGS=0VVDS=-10Vf=1.0MHzf=1.0MHz
Min.-20---0.3--------------Typ.----10--8.51.23102027226601351207.2
--Max.Units-97130-1--10+10021------1470
VmΩmΩVSuAnAnCnCnCnsnsnsnspFpFpFΩ
Source-Drain Diode
SymbolVSDtrrQrr
Parameter
Forward On Voltage2Reverse Recovery TimeReverse Recovery Charge
Test Conditions
IS=-0.8A, VGS=0VIS=-3A, VGS=0V,dI/dt=100A/µs
Min.---Typ.-2411
Max.Units-1.2--VnsnC
Notes:
1.Pulse width limited by Max. junction temperature.2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10sec ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION OR DESIGN.
2
AP2301AGN-HF1616TA=25Co12-ID , Drain Current (A)VG= -2.0V8-ID , Drain Current (A)-5.0V-4.5V-3.5V-2.5VTA=150oC12-5.0V-4.5V-3.5V-2.5V65mΩVG= -2.0V84400246002468-VDS , Drain-to-Source Voltage (V)-VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
802ID=-2ATA=25C70oID= -3AVGS= -4.5V1.6Normalized RDS(ON)RDS(ON) (mΩ)601.2500.840123450.4-50050100150-VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (oC) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
24ID= -250uA1.63Tj=150oC-IS(A)2Tj=25oCNormalized VGS(th)1.20.810.42.01E+08000.20.40.60.811.20-50050100150-VSD , Source-to-Drain Voltage (V)Tj, Junction Temperature ( oC) Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP2301AGN-HF
61000f=1.0MHz-VGS , Gate to Source Voltage (V)5ID= -3AVDS=-10V800465mΩC (pF)600Ciss340022001CossCrss0024681012159131721250QG , Total Gate Charge (nC)-VDS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
1001DUTY=0.5Normalized Thermal Response (Rthja)0.210Operation in this arealimited by RDS(ON)100us1ms0.10.1-ID (A)0.05110ms100ms0.02PDMtTSingle Pulse0.010.01Duty factor = t/TPeak Tj = PDM x Rthja + TaRthja = 270℃/W0.1TA=25oCSingle Pulse0.010.010.11101sDC0.0011000.00010.0010.010.11101001000-VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
84VDS=-5V-ID , Drain Current (A)6-ID , Drain Current (A)Tj=150oCTj=25oCTj=-40oC00.511.522.533422100255075100125150-VGS , Gate-to-Source Voltage (V)TA , Ambient Temperature ( C )o Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4
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