首页 养生问答 疾病百科 养生资讯 女性养生 男性养生
您的当前位置:首页正文

AP2301AGN-HF (20130311)

2024-08-23 来源:华佗健康网
AP2301AGN-HF

Halogen-Free Product

Advanced Power Electronics Corp.

▼ Simple Drive Requirement▼ Small Package Outline▼ Surface Mount Device

▼ RoHS Compliant & Halogen-Free

SOT-23

G

S

P-CHANNEL ENHANCEMENT MODEPOWER MOSFET

D

BVDSSRDS(ON)ID

D-20V97mΩ- 3.3A

Description

AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombination of fast switching,low on-resistance and cost-effectiveness.TheSOT-23packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.

GSAbsolute Maximum Ratings

SymbolVDSVGS

ID@TA=25℃ID@TA=70℃IDM

PD@TA=25℃TSTGTJ

Parameter

Drain-Source VoltageGate-Source Voltage

Continuous Drain Current3, VGS @ 4.5VContinuous Drain Current3, VGS @ 4.5VPulsed Drain Current1Total Power DissipationStorage Temperature Range

Operating Junction Temperature Range

Rating- 20+8-3.3-2.7-151.38-55 to 150-55 to 150

UnitsVVAAAW ℃℃

Thermal Data

SymbolRthj-a

Parameter

Maximum Thermal Resistance, Junction-ambient3

Value90

Unit℃/W

1

201303084

Data and specifications subject to change without notice

AP2301AGN-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSSRDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrssRg

Parameter

Drain-Source Breakdown VoltageStatic Drain-Source On-Resistance2

Test Conditions

VGS=0V, ID=-250uAVGS=-4.5V, ID=-3AVGS=-2.5V, ID=-2.6A

Gate Threshold VoltageForward TransconductanceDrain-Source Leakage CurrentGate-Source LeakageTotal Gate ChargeGate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay TimeRise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate Resistance

VDS=VGS, ID=-250uAVDS=-5V, ID=-3AVDS=-16V, VGS=0VVGS= +8V, VDS=0VID=-3AVDS=-10VVGS=-4.5VVDS=-10VID=-1ARG=3.3ΩVGS=-5VVGS=0VVDS=-10Vf=1.0MHzf=1.0MHz

Min.-20---0.3--------------Typ.----10--8.51.23102027226601351207.2

--Max.Units-97130-1--10+10021------1470

VmΩmΩVSuAnAnCnCnCnsnsnsnspFpFpFΩ

Source-Drain Diode

SymbolVSDtrrQrr

Parameter

Forward On Voltage2Reverse Recovery TimeReverse Recovery Charge

Test Conditions

IS=-0.8A, VGS=0VIS=-3A, VGS=0V,dI/dt=100A/µs

Min.---Typ.-2411

Max.Units-1.2--VnsnC

Notes:

1.Pulse width limited by Max. junction temperature.2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10sec ; 270℃/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION OR DESIGN.

2

AP2301AGN-HF1616TA=25Co12-ID , Drain Current (A)VG= -2.0V8-ID , Drain Current (A)-5.0V-4.5V-3.5V-2.5VTA=150oC12-5.0V-4.5V-3.5V-2.5V65mΩVG= -2.0V84400246002468-VDS , Drain-to-Source Voltage (V)-VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

802ID=-2ATA=25C70oID= -3AVGS= -4.5V1.6Normalized RDS(ON)RDS(ON) (mΩ)601.2500.840123450.4-50050100150-VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (oC) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

24ID= -250uA1.63Tj=150oC-IS(A)2Tj=25oCNormalized VGS(th)1.20.810.42.01E+08000.20.40.60.811.20-50050100150-VSD , Source-to-Drain Voltage (V)Tj, Junction Temperature ( oC) Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

3

AP2301AGN-HF

61000f=1.0MHz-VGS , Gate to Source Voltage (V)5ID= -3AVDS=-10V800465mΩC (pF)600Ciss340022001CossCrss0024681012159131721250QG , Total Gate Charge (nC)-VDS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1001DUTY=0.5Normalized Thermal Response (Rthja)0.210Operation in this arealimited by RDS(ON)100us1ms0.10.1-ID (A)0.05110ms100ms0.02PDMtTSingle Pulse0.010.01Duty factor = t/TPeak Tj = PDM x Rthja + TaRthja = 270℃/W0.1TA=25oCSingle Pulse0.010.010.11101sDC0.0011000.00010.0010.010.11101001000-VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

84VDS=-5V-ID , Drain Current (A)6-ID , Drain Current (A)Tj=150oCTj=25oCTj=-40oC00.511.522.533422100255075100125150-VGS , Gate-to-Source Voltage (V)TA , Ambient Temperature ( C )o Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current

v.s. Ambient Temperature

4

因篇幅问题不能全部显示,请点此查看更多更全内容